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Journal paper
Date of publication2009-03-00
Journal levelSCI / EI
Paper title (chapter)The Impact of Strain Technology on FUSI Gate SOI CMOSFET
Name of journalIEEE Transactions on Device and Materials Reliability
number of chapters9
Issue No.1
起頁74
迄頁79
Total number of pages6
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsWen-Kuan Yeh, Jean-An Wang, Ming-Hsing Tsai, Chien-Ting Lin, and Po-Ying Chen
Number of authors5
Author's typeFirst Author
Language usedEnglish

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