:::
Journal paper
Date of publication2007-05-00
Journal levelSCI / EI
Paper title (chapter)Impacts of Notched-Gate Structure on Contact Etch Stop ayer (CESL)Stressed 90-nm nMOSFET
Name of journalIEEE Electron Device Letters
number of chapters28
Issue No.5
起頁376
迄頁378
Total number of pages3
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsChien-Ting Lin, Yean-Kuen Fang, Wen-Kuan Yeh, Chieh-Ming Lai, Che-Hua Hsu, Li-Wei Cheng, and Guang Hwa Ma
Number of authors7
Author's typeCorresponding Author
Language usedEnglish

Calendar

« April 2019»
Mon.Tue.Wed.Thu.Fri.Sat.Sun.
01020304050607
08091011121314
15161718192021
22232425262728
2930
Decorative image

Decorative image

Decorative image

Gallery

Decorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative image
Read more
cron web_use_log