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Journal paper
Date of publication2007-05-00
Journal levelSCI / EI
Paper title (chapter)Impacts of Notched-Gate Structure on Contact Etch Stop ayer (CESL)Stressed 90-nm nMOSFET
Name of journalIEEE Electron Device Letters
number of chapters28
Issue No.5
起頁376
迄頁378
Total number of pages3
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsChien-Ting Lin, Yean-Kuen Fang, Wen-Kuan Yeh, Chieh-Ming Lai, Che-Hua Hsu, Li-Wei Cheng, and Guang Hwa Ma
Number of authors7
Author's typeCorresponding Author
Language usedEnglish

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