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Journal paper
Date of publication2007-02-00
Journal levelSCI / EI
Paper title (chapter)The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring
Name of journalIEEE Electron Device Letters
number of chapters28
Issue No.2
起頁142
迄頁144
Total number of pages3
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsChieh-Ming Lai, Yean-Kuen Fang, Wen-Kuan Yeh, Chien-Ting Lin, and T. H. Chou
Number of authors5
Author's typeCorresponding Author
Language usedEnglish

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