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Journal paper
Date of publication2007-03-00
Journal levelSCI
Paper title (chapter)A New Threshold Voltage Model for Symmetrical Double-Gate MOSFET,s with High-K Gate Dielectrics
Name of journalSolid-State Electronics
number of chaptersvol.51
Issue No.no.3
起頁387
迄頁393
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang, M.L.Chen
Number of authors2
Author's typeFirst Author
Language usedEnglish

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