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Journal paper
Date of publication2006-03-00
Journal levelSCI
Paper title (chapter)A New Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-gate(SG) MOSFETs
Name of journalMicroelectronics Reliability
number of chaptersvol.47
Issue No.no.2-3
起頁379
迄頁383
Total number of pages5
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Number of authors1
Author's typeFirst Author
Language usedEnglish

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