:::
| Date of publication | 2006-10-23 |
|---|---|
| Journal level | EI |
| Paper title (chapter) | A New Two-dimensional Analytical Model for Threshold Voltage Model in Undoped Surrounding-gate MOSFETs |
| Name of journal | IEEE 8th International Conference on Solid-State and Integrated Circuits Technology |
| number of chapters | vol.2 |
| Name of author (Chinese) | Te-Kung Chiang |
| Name of author (English) | Te-Kung Chiang |
| Authors | T.K. Chiang |
| Language used | English |
