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Journal paper
Date of publication2006-10-23
Journal levelEI
Paper title (chapter)A New Two-dimensional Analytical Model for Threshold Voltage Model in Undoped Surrounding-gate MOSFETs
Name of journalIEEE 8th International Conference on Solid-State and Integrated Circuits Technology
number of chaptersvol.2
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang
Language usedEnglish

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