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Journal paper
Date of publication2011-03-00
Journal levelSCI / EI
Paper title (chapter)The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
Name of journalIEEE Transactions on Device and Materials Reliability
number of chapters11
Issue No.1
起頁7
迄頁12
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsWen-Kuan Yeh, Yu-Ting Chen, Fon-Shan Huang, Chia-Wei Hsu, Chun-Yu Chen, Yean-Kuen Fang, Kwang-Jow Gan, and Po-Ying Chen
Number of authors8
Author's typeFirst Author
Language usedEnglish

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