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Journal paper
Date of publication2011-01-00
Journal levelSCI
Paper title (chapter)Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors
Name of journalJ. Vac. Sci. Technol. B
number of chapters29
Issue No.1
起頁01A904-1
迄頁01A904-4
Total number of pages5
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsWen-Teng Chang, Jian-An Lin, Chih-Chung Wang, and Wen-Kuan Yeh
Number of authors4
Author's typeCorresponding Author / Other
Language usedEnglish

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