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Journal paper
Date of publication2005-11-00
Journal levelSCI
Paper title (chapter)A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs
Name of journalSemiconductor Science and Technology
number of chaptersvol.20
Issue No.no.11
起頁1173
迄頁1178
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Language usedEnglish

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