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Journal paper
Date of publication2009-02-00
Journal level其他
Paper title (chapter)Annealing of defect states in reactive ion etched GaN
Name of journalJournal of Physics and Chemistry of Solids
number of chaptersvol.69
Issue No.Issues 2-3
起頁719
迄頁723
Name of author (Chinese)Wen-How Lan
Name of author (English)Wen-How Lan
AuthorsW.H. Lan, Kuo-Chin Huang, Kai Feng Huang, Jia-Ching Lin, Yi-Cheng Cheng, Wen-Jen Lin
Number of authors6
Author's typeFirst Author
Language usedEnglish

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