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Journal paper
Date of publication2005-03-00
Journal levelSCI
Paper title (chapter)A New Scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)
Name of journalSolid-State Electronics
number of chaptersvol.49
Issue No.no.3
起頁317
迄頁322
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Number of authors1
Language usedEnglish

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