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Journal paper
Date of publication2011-03-00
Journal levelSCI
Paper title (chapter)Impact of SOI thickness on device performance and gate oxide reliability of Ni fully Silicide metal-gate strained SOI MOSFET
Name of journalMicroelectronic Engineering
number of chapters88
Issue No.3
起頁228
迄頁234
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsCheng-Li Lin and Wen-Kuan Yeh
Number of authors2
Author's typeOther
Language usedEnglish

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