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Journal paper
Date of publication2010-05-00
Journal levelSCI
Paper title (chapter)Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing
Name of journalMicroelectronics Reliability
number of chapters50
Issue No.5
起頁618
迄頁621
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsChia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang , Feng-Renn Juang, Chien-Ting Lin, and Chien-Ming Lai
Number of authors8
Author's typeCorresponding Author
Language usedEnglish

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