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Journal paper
Date of publication2010-02-00
Journal levelSCI / EI
Paper title (chapter)The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET
Name of journalIEEE Electron Device Letters
number of chapters31
Issue No.2
起頁165
迄頁167
Total number of pages3
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsCheng-Li Lin, Yu-Ting Chen, Fon-Shan Huang, Wen-Kuan Yeh, and Chien-Ting Lin
Number of authors5
Author's typeOther
Language usedEnglish

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