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Journal paper
Date of publication2009-07-00
Journal levelSCI / EI
Paper title (chapter)Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs
Name of journalIEEE Electron Device Letters
number of chapters30
Issue No.7
起頁781
迄頁783
Total number of pages3
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsChia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Chien-Ting Lin, Che-Hua Hsu, Li-Wei Cheng, and Chien-Ming Lai
Number of authors8
Author's typeCorresponding Author
Language usedEnglish

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