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Journal paper
Date of publication2011-05-00
Journal levelSCI
Paper title (chapter)NBTI reliability on high-k metal-gate SiGe transistor and circuit performances
Name of journalMicroelectron. Reliab.
number of chapters51
Issue No.5
起頁914
迄頁918
Total number of pages5
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsJiann-Shiun Yuan, Wen-Kuan Yeh, Shuyu Chen and Chia-Wei Hsu
Number of authors4
Author's typeOther
Language usedEnglish

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