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Journal paper
Date of publication2012-05-01
Journal levelSCI
Paper title (chapter)Stress-induced capacitance of partially depleted MOSFETs from ring oscillator delay
Name of journalIEICE Transactions on Electronics
number of chaptersE95-C
Issue No.5
起頁802
迄頁806
Total number of pages5
Name of author (Chinese)Wen-Teng Chang
Name of author (English)Wen-Teng Chang
AuthorsWen-Teng Chang
Number of authors1
Author's typeFirst Author / Corresponding Author
ISSN(ISBN) 0916-8524

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