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Journal paper
Date of publication2012-06-00
Journal levelSCI
Paper title (chapter)A novel short-channel model for threshold voltage of tri-gate MOSFETs with localized trapped charges
Name of journalIEEE Transactions on Device and Materials Reliability (TDMR)
number of chaptersvol. 12
Issue No.no. 2
起頁311
迄頁316
Total number of pages6
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Number of authors1
Author's typeFirst Author / Corresponding Author

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