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Journal paper
Date of publication2008-02-00
Journal levelSCI
Paper title (chapter)Annealing of defect states in reactive ion etched GaN
Name of journalJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
number of chapters69
Issue No.2-3
起頁719
迄頁723
Name of author (Chinese)Wen-How Lan
Name of author (English)Wen-How Lan
AuthorsLan, Wen-How; Huang, Kuo-Chin; Huang, Kai Feng; Lin, Jia-Ching; Cheng, Yi-Cheng; Lin, Wen-Jen
Number of authors6
Author's typeFirst Author

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