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Journal paper
Date of publication2012-08-00
Journal levelSCI
Paper title (chapter)Reliability Improvement of 28-nm High-k/Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing
Name of journalIEEE ELECTRON DEVICE LETTERS
number of chapters33
Issue No.8
起頁1183
迄頁1185
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsYi-Lin Yang, Wenqi Zhang, Chi-Yun Cheng, Yi-Ping Huang, Pin-Tseng Chen, Chia-Wei Hsu, Li-Kong Chin, Chien-Ting Lin, Che-Hua Hsu, Chien-Ming Lai, and Wen-Kuan Yeh
Number of authors11
Author's typeOther

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