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Journal paper
Date of publication2012-11-00
Journal levelSCI
Paper title (chapter)A new quasi-2-D threshold voltage model for short-channel junctionless (JL) cylindrical surrounding-gate MOSFET
Name of journalIEEE Trans. on Electron Devices (TED)
number of chaptersvol. 59
Issue No.no. 11
起頁3127
迄頁3129
Total number of pages3
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Number of authors1
Author's typeFirst Author / Corresponding Author

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