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Journal paper
Date of publication2014-02-00
Journal levelSCI
Paper title (chapter)Reliability of the Doping Concentration in an Ultra-thin Body and Buried Oxide Silicon on Insulator (SOI) and Comparison with a Partially Depleted SOI
Name of journalMicroelectronics Reliability
number of chapters54
Issue No.2
起頁485
迄頁489
Total number of pages5
Name of author (Chinese)Wen-Teng Chang
Name of author (English)Wen-Teng Chang
AuthorsW. T. Chang, C. M. Lai(賴俊銘) , W. K. Yeh
Number of authors3
Author's typeFirst Author / Corresponding Author

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