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Journal paper
Date of publication2013-11-00
Journal levelSCI
Paper title (chapter)A Novel Quasi-3-D Threshold Voltage Model for Fully Depleted Quadruple-Gate (FDQG) MOSFETs: With Equivalent Number of Gates (ENG) Included
Name of journalIEEE Trans. on Nanotechnology
number of chaptersvol. 12
Issue No.no. 6
起頁1022
迄頁1025
Total number of pages3
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang
Number of authors1
Author's typeFirst Author / Corresponding Author

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