:::
Journal paper
Date of publication2013-11-00
Journal levelSCI
Paper title (chapter)Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs
Name of journalIEEE TRANSACTIONS ON ELECTRON DEVICES
number of chapters60
Issue No.11
起頁3639
迄頁3644
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsCheng-Li Lin, Po-Hsiu Hsiao, Wen-Kuan Yeh, Han-Wen Liu, Syuan-Ren Yang, Yu-Ting Chen, Kun-Ming Chen,and Wen-Shiang Liao
Number of authors8
Author's typeOther

Calendar

« September 2019»
Mon.Tue.Wed.Thu.Fri.Sat.Sun.
      01
02030405060708
09101112131415
16171819202122
23242526272829
30
Decorative image

Decorative image

Decorative image

Gallery

Decorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative image
Read more
cron web_use_log