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Journal paper
Date of publication2013-11-00
Journal levelSCI
Paper title (chapter)Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs
Name of journalIEEE TRANSACTIONS ON ELECTRON DEVICES
number of chapters60
Issue No.11
起頁3639
迄頁3644
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsCheng-Li Lin, Po-Hsiu Hsiao, Wen-Kuan Yeh, Han-Wen Liu, Syuan-Ren Yang, Yu-Ting Chen, Kun-Ming Chen,and Wen-Shiang Liao
Number of authors8
Author's typeOther

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