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| Date of publication | 2011-01-10 |
|---|---|
| Journal level | SCI |
| Paper title (chapter) | Effect of Gate Capping Configurations and Silicon-on-Insulator Thickness with External Stresses on Partially Depleted MOSFETs |
| Name of journal | Journal of Vacuum Science and Technology B |
| number of chapters | 29 |
| Issue No. | 1 |
| 起頁 | 1071 |
| 迄頁 | 1023 |
| Total number of pages | 4 |
| Name of author (Chinese) | Wen-Teng Chang |
| Name of author (English) | Wen-Teng Chang |
| Authors | Wen-Teng Chang, Chih-Chung Wang, Jian-An Lin, Wen-Kuan Yeh |
| Number of authors | 4 |
| Author's type | First Author / Corresponding Author |
| ISSN(ISBN) | 98-2221-E-390-025-MY2 |
| Language used | English |
