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Journal paper
Date of publication2011-01-10
Journal levelSCI
Paper title (chapter)Effect of Gate Capping Configurations and Silicon-on-Insulator Thickness with External Stresses on Partially Depleted MOSFETs
Name of journalJournal of Vacuum Science and Technology B
number of chapters29
Issue No.1
起頁1071
迄頁1023
Total number of pages4
Name of author (Chinese)Wen-Teng Chang
Name of author (English)Wen-Teng Chang
AuthorsWen-Teng Chang, Chih-Chung Wang, Jian-An Lin, Wen-Kuan Yeh
Number of authors4
Author's typeFirst Author / Corresponding Author
ISSN(ISBN)98-2221-E-390-025-MY2
Language usedEnglish

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