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Journal paper
Date of publication2015-01-00
Journal levelSCI
Paper title (chapter)Impact of Fin Width and Back Bias under Hot Carrier Injection on Double-Gate FinFETs
Name of journalIEEE Transactions on Device and Materials Reliability
number of chapters15
Issue No.1
起頁86
迄頁89
Total number of pages4
Name of author (Chinese)Wen-Teng Chang
Name of author (English)Wen-Teng Chang
AuthorsWen-Teng Chang, Li-Gong Cin, Wen-Kuan Yeh
Number of authors3
Author's typeFirst Author / Corresponding Author
Language usedEnglish

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