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| Date of publication | 2015-01-00 |
|---|---|
| Journal level | SCI |
| Paper title (chapter) | Impact of Fin Width and Back Bias under Hot Carrier Injection on Double-Gate FinFETs |
| Name of journal | IEEE Transactions on Device and Materials Reliability |
| number of chapters | 15 |
| Issue No. | 1 |
| 起頁 | 86 |
| 迄頁 | 89 |
| Total number of pages | 4 |
| Name of author (Chinese) | Wen-Teng Chang |
| Name of author (English) | Wen-Teng Chang |
| Authors | Wen-Teng Chang, Li-Gong Cin, Wen-Kuan Yeh |
| Number of authors | 3 |
| Author's type | First Author / Corresponding Author |
| Language used | English |
