:::
Journal paper
Date of publication2015-01-00
Journal levelSCI
Paper title (chapter)Impact of Fin Width and Back Bias under Hot Carrier Injection on Double-Gate FinFETs
Name of journalIEEE Transactions on Device and Materials Reliability
number of chapters15
Issue No.1
起頁86
迄頁89
Total number of pages4
Name of author (Chinese)Wen-Teng Chang
Name of author (English)Wen-Teng Chang
AuthorsWen-Teng Chang, Li-Gong Cin, Wen-Kuan Yeh
Number of authors3
Author's typeFirst Author / Corresponding Author
Language usedEnglish

Calendar

« September 2019»
Mon.Tue.Wed.Thu.Fri.Sat.Sun.
      01
02030405060708
09101112131415
16171819202122
23242526272829
30
Decorative image

Decorative image

Decorative image

Gallery

Decorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative imageDecorative image
Read more
cron web_use_log