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Journal paper
Date of publication2010-04-00
Journal levelSCI
Paper title (chapter)A New Analytical Model for Short Channel Fully Depleted DualMaterial Gate Silicon on Insulator Metal-Oxide Semiconductor Field-Effect Transistors
Name of journalJapanese Journal of Applied Physics
number of chaptersvol.47
Issue No.no.7
起頁1022
迄頁1027
Total number of pages6
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Number of authors1
Author's typeFirst Author / Corresponding Author
Language usedEnglish

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