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Journal paper
Date of publication2009-07-00
Journal levelSCI
Paper title (chapter)A New Two-dimensional Model for Asymmetrical Dual Gate Material Double-Gate (ADMDG) MOSFET’s
Name of journalMicroelectronics Reliability
number of chaptersvol.49
Issue No.no.7
起頁693
迄頁698
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT. K. Chiang
Number of authors1
Author's typeFirst Author
Language usedEnglish

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