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Seminar paper
Year2010
Paper type會議論文
Paper level其他
Paper title (chapter)A New Two-Dimensional Analytical Model for the Potential Distribution and Threshold Voltage of the Fully-Depleted SOI Four-Gate Transistor
Name of conferenceIEEE International Conference on Solid-State and Integrated Circuits Technology
Conference starting time2010-11-01
Conference closing time2010-11-04
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang
Number of authors1
Author's typeFirst Author / Corresponding Author
LocationShanghai, China
Language usedEnglish

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