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Seminar paper
Year2006
Paper type口頭報告 / 會議論文
Paper levelEI
Paper title (chapter)= 1.3 m High density InGaAs/GaAs quantum dots grown by molecular beam epitaxy
Name of conferenceIndium Phosphide and Related materials (IPRM’06)
Conference starting time2006-05-00
Conference closing time2006-05-00
Name of author (Chinese)(David) Jui-Yang, Feng
Name of author (English)(David) Jui-Yang, Feng
AuthorsDavid J. Feng, T. E. Tzeng, C. Y. Chen, T. S. Lay, and T. Y. Chang
Number of authors5
Author's typeFirst Author
Language usedEnglish

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