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Year | 2006 |
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Paper type | 口頭報告 / 會議論文 |
Paper level | EI |
Paper title (chapter) | = 1.3 m High density InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
Name of conference | Indium Phosphide and Related materials (IPRM’06) |
Conference starting time | 2006-05-00 |
Conference closing time | 2006-05-00 |
Name of author (Chinese) | (David) Jui-Yang, Feng |
Name of author (English) | (David) Jui-Yang, Feng |
Authors | David J. Feng, T. E. Tzeng, C. Y. Chen, T. S. Lay, and T. Y. Chang |
Number of authors | 5 |
Author's type | First Author |
Language used | English |