:::
| Year | 2006 |
|---|---|
| Paper type | 口頭報告 / 會議論文 |
| Paper level | EI |
| Paper title (chapter) | = 1.3 m High density InGaAs/GaAs quantum dots grown by molecular beam epitaxy |
| Name of conference | Indium Phosphide and Related materials (IPRM’06) |
| Conference starting time | 2006-05-00 |
| Conference closing time | 2006-05-00 |
| Name of author (Chinese) | (David) Jui-Yang, Feng |
| Name of author (English) | (David) Jui-Yang, Feng |
| Authors | David J. Feng, T. E. Tzeng, C. Y. Chen, T. S. Lay, and T. Y. Chang |
| Number of authors | 5 |
| Author's type | First Author |
| Language used | English |
