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Seminar paper
Year2006
Paper type會議論文
Paper level其他
Paper title (chapter)A New Two-dimensional Analytical Model for Threshold Voltage Model in Undoped Surrounding-gate MOSFETs
Name of conferenceIEEE 8th International Conference on Solid-State and Integrated Circuits Technology
Conference starting time2006-10-23
Conference closing time2006-10-26
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang
Author's typeFirst Author
LocationShanghai,China
Language usedEnglish

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