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Seminar paper
Year2006
Paper type會議論文
Paper level其他
Paper title (chapter)A New two-dimensional analytical model for threshold voltage in asymmetric DG MOSFETs
Name of conferencePP. 284-285 International Symposium on Nano Science and Technology
Conference starting time2006-11-09
Conference closing time2006-11-10
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang
Author's typeFirst Author
LocationTainan,Taiwan
Language usedEnglish

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