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Seminar paper
Year2006
Paper type會議論文
Paper level其他
Paper title (chapter)A new two-dimensional analytical model for threshold voltage in DG MOSFETs with High-K Gate
Name of conferencePP. 288-289 International Symposium on Nano Science and Technology
Conference starting time2006-11-09
Conference closing time2006-11-10
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang, M.L. Chen
Author's typeFirst Author
LocationTainan,Taiwan
Language usedEnglish

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