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Seminar paper
Year2011
Paper type會議論文
Paper level其他
Paper title (chapter)A Two-dimensional Short-Channel Model for Threshold Voltage of Tri-Gate (TG) MOSFETs with Localized Trapped Charges
Name of conference2011 IEEE International Conference on Solid-State and Integrated Circuits Technology
Conference starting time2011-11-17
Conference closing time2011-11-18
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsTe-Kuang Chiang and Duo-Han Chang(張鐸瀚)
Number of authors2
Author's typeFirst Author
LocationTianjin,China

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