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Seminar paper
Year2011
Paper type會議論文
Paper level其他
Paper title (chapter)A Simple Model of Subthreshold Current for double-gate MOSFET with Interface Trapped Charges
Name of conference2011 International Electron Devices and Materials Symposium (IEDMS)(IEDMS2011)
Conference starting time2011-11-17
Conference closing time2011-11-18
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsTe-Kuang Chiang and Duo-Han Chang(張鐸瀚)
Number of authors2
Author's typeFirst Author
LocationTaipei, Taiwan

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