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| Year | 2011 |
|---|---|
| Paper type | 海報展示 |
| Paper level | EI |
| Paper title (chapter) | Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing |
| Name of conference | International Electron Devices and Materials Symposia (IEDMS) |
| Conference starting time | 2011-11-00 |
| Conference closing time | 2011-11-00 |
| Name of author (Chinese) | Wen-Kuan Yeh |
| Name of author (English) | Wen-Kuan Yeh |
| Authors | Yi-Lin Yang, Yi-Ping Huang, Pin-Tseng Chen, Wenqi Zhang, Chi-Yun Cheng(鄭濟允), Li-Kong Chin(秦禮功), Chia-Wei Hsu and Wen-Kuan Yeh |
| Number of authors | 8 |
| Author's type | Other |
| Location | Taipei, Taiwan |
| Language used | English |
