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Seminar paper
Year2011
Paper type海報展示
Paper levelEI
Paper title (chapter)Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing
Name of conferenceInternational Electron Devices and Materials Symposia (IEDMS)
Conference starting time2011-11-00
Conference closing time2011-11-00
Name of author (Chinese)Wen-Kuan Yeh
Name of author (English)Wen-Kuan Yeh
AuthorsYi-Lin Yang, Yi-Ping Huang, Pin-Tseng Chen, Wenqi Zhang, Chi-Yun Cheng(鄭濟允), Li-Kong Chin(秦禮功), Chia-Wei Hsu and Wen-Kuan Yeh
Number of authors8
Author's typeOther
LocationTaipei, Taiwan
Language usedEnglish

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