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Seminar paper
Year2013
Paper type會議論文 / 壁報論文
Paper level其他
Paper title (chapter)Channel Dimension–Related Shifts in Threshold Voltage and Transconductance of Strained-SiGe MOSFETs
Name of conferenceInternational Electron Devices and Materials Symposium (IEDMS)
Conference starting time2013-11-28
Conference closing time2013-11-29
Name of author (Chinese)Wen-Teng Chang
Name of author (English)Wen-Teng Chang
AuthorsWen-Teng Chang, and Yu-Seng Lin
Number of authors2
Author's typeFirst Author / Corresponding Author
LocationNantou, Taiwan

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