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| Year | 2013 |
|---|---|
| Paper type | 會議論文 / 壁報論文 |
| Paper level | 其他 |
| Paper title (chapter) | Channel Dimension–Related Shifts in Threshold Voltage and Transconductance of Strained-SiGe MOSFETs |
| Name of conference | International Electron Devices and Materials Symposium (IEDMS) |
| Conference starting time | 2013-11-28 |
| Conference closing time | 2013-11-29 |
| Name of author (Chinese) | Wen-Teng Chang |
| Name of author (English) | Wen-Teng Chang |
| Authors | Wen-Teng Chang, and Yu-Seng Lin |
| Number of authors | 2 |
| Author's type | First Author / Corresponding Author |
| Location | Nantou, Taiwan |
