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Seminar paper
Year2015
Paper type會議論文
Paper levelSCI
Paper title (chapter)A New Quasi 2D Interface Trapped Charge Degraded Subthreshold Current Model for Junctionless Surrounding-Gate (JLSRG) MOSFETs
Name of conference2015 IEEE International Symposium on next generation electronics (ISNE2015)
Conference starting time2015-05-04
Conference closing time2015-05-06
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang, and Yi-Hung Chiu
Number of authors2
Author's typeFirst Author
LocationTaipei,Taiwan

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