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Seminar paper
Year2015
Paper type會議論文
Paper levelSCI
Paper title (chapter)A Three Dimensional Analytical Subthreshold Current Model for Quadruple Gate MOSFET with the Interface Trapped Charges
Name of conference2015 IEEE International Symposium on next generation electronics (ISNE2015)
Conference starting time2015-05-04
Conference closing time2015-05-06
Name of author (Chinese)Te-Kung Chiang
Name of author (English)Te-Kung Chiang
AuthorsT.K. Chiang, Hong-Wun Gao, and Yeong-Her Wang, Che-Wei Liu
Number of authors3
Author's typeFirst Author
LocationTaipei, Taiwan

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