"The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET" , IEEE Transaction on Device and Materials Reliability , 16 , 4 , pp610-616 ,2016, (SCI)

  • 出版日期：2016-09-00
  • 期刊等級：SCI
  • 論文名稱(篇名)：The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET
  • 期刊名：IEEE Transaction on Device and Materials Reliability
  • 卷數：16
  • 期數：4
  • 起頁：610
  • 迄頁：616
  • 總頁數：7
  • 作者中文名：葉文冠
  • 作者英文名： Wen-Kuan Yeh
  • 全部作者：Wen-Kuan Yeh, Wenqi Zhang, Yi-Lin Yang, An-Ni Dai(戴安妮), Kehuey Wu, Tung-Huan Chou, Cheng-Li Lin, Kwang-Jow Gan, Chia-Hung Shih and Po-Ying Chen
  • 著作人數：10
  • 作者型態：First Author