"The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure" , IEEE Transactions on Device and Materials Reliability , 11 , 1 , pp7-12 ,2011, (SCI),(EI)

  • 出版日期：2011-03-00
  • 期刊等級：SCI / EI
  • 論文名稱(篇名)：The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
  • 期刊名：IEEE Transactions on Device and Materials Reliability
  • 卷數：11
  • 期數：1
  • 起頁：7
  • 迄頁：12
  • 作者中文名：葉文冠
  • 作者英文名：Wen-Kuan Yeh
  • 全部作者： Wen-Kuan Yeh, Yu-Ting Chen, Fon-Shan Huang, Chia-Wei Hsu, Chun-Yu Chen, Yean-Kuen Fang, Kwang-Jow Gan, and Po-Ying Chen
  • 著作人數：8
  • 作者型態：First Author
  • 使用語言：英文