"Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors" , J. Vac. Sci. Technol. B , 29 , 1 , pp01A904-1-01A904-4 ,2011, (SCI)

  • 出版日期：2011-01-00
  • 期刊等級：SCI
  • 論文名稱(篇名)：Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors
  • 期刊名：J. Vac. Sci. Technol. B
  • 卷數：29
  • 期數：1
  • 起頁：01A904-1
  • 迄頁：01A904-4
  • 總頁數：5
  • 作者中文名：葉文冠
  • 作者英文名：Wen-Kuan Yeh
  • 全部作者：Wen-Teng Chang, Jian-An Lin, Chih-Chung Wang, and Wen-Kuan Yeh
  • 著作人數：4
  • 作者型態：Corresponding Author / Other
  • 使用語言：英文