友善列印 - "The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring" , IEEE Electron Device Letters , 28 , 2 , pp142-144 ,2007, (SCI),(EI)

"The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring" , IEEE Electron Device Letters , 28 , 2 , pp142-144 ,2007, (SCI),(EI)

出版日期：2008-02-00

期刊等級：SCI / EI

論文名稱(篇名)：The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring

期刊名：IEEE Electron Device Letters

卷數：28

期數：2

起頁：142

迄頁：144

總頁數：3

作者中文名：葉文冠

作者英文名：Wen-Kuan Yeh

全部作者：Chieh-Ming Lai, Yean-Kuen Fang, Wen-Kuan Yeh, Chien-Ting Lin, and T. H. Chou

著作人數：5

作者型態：Corresponding Author

使用語言：英文