Print - Lan, Wen-How; Huang, Kuo-Chin; Huang, Kai Feng; Lin, Jia-Ching; Cheng, Yi-Cheng; Lin, Wen-Jen,"Annealing of defect states in reactive ion etched GaN" , JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , 69 , 2-3 , pp719-723 ,2008, (SCI)

Lan, Wen-How; Huang, Kuo-Chin; Huang, Kai Feng; Lin, Jia-Ching; Cheng, Yi-Cheng; Lin, Wen-Jen,"Annealing of defect states in reactive ion etched GaN" , JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS , 69 , 2-3 , pp719-723 ,2008, (SCI)

出版日期 2008-02-00
期刊等級 SCI
論文名稱(篇名) Annealing of defect states in reactive ion etched GaN
期刊名 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷數 69
期數 2-3
起頁 719
迄頁 723
作者中文名藍文厚
作者英文名 Wen-How Lan
全部作者 Lan, Wen-How; Huang, Kuo-Chin; Huang, Kai Feng; Lin, Jia-Ching; Cheng, Yi-Cheng; Lin, Wen-Jen
著作人數 6
作者型態 First Author